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HMC509LP5RTR PDF预览

HMC509LP5RTR

更新时间: 2024-01-22 11:56:44
品牌 Logo 应用领域
HITTITE /
页数 文件大小 规格书
6页 258K
描述
Oscillator,

HMC509LP5RTR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
JESD-30 代码:S-PQCC-N32端子数量:32
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:QCCN
封装等效代码:LCC32,.2SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER电源:5 V
认证状态:Not Qualified子类别:Other Analog ICs
最大供电电流 (Isup):270 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD

HMC509LP5RTR 数据手册

 浏览型号HMC509LP5RTR的Datasheet PDF文件第2页浏览型号HMC509LP5RTR的Datasheet PDF文件第3页浏览型号HMC509LP5RTR的Datasheet PDF文件第4页浏览型号HMC509LP5RTR的Datasheet PDF文件第5页浏览型号HMC509LP5RTR的Datasheet PDF文件第6页 
HMC509LP5 / 509LP5E  
v01.1208  
MMIC VCO w/ HALF FREQUENCY  
OUTPUT 7.8 - 8.8 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Half Frequency, for:  
Dual Output: Fo = 7.8 - 8.8 GHz  
Fo/2 = 3.9 - 4.4 GHz  
• VSAT Radio  
Pout: +13 dBm  
• Point to Point/Multi-Point Radio  
• Test Equipment & Industrial Controls  
• Military End-Use  
Phase Noise: -115 dBc/Hz @100 kHz Typ.  
No External Resonator Needed  
QFN Leadless SMT Package, 25 mm2  
Functional Diagram  
General Description  
The HMC509LP5 & HMC509LP5E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC  
VCOs. The HMC509LP5 & HMC509LP5E integrate  
resonators, negative resistance devices, varactor  
diodes and feature a half frequency output. The VCO’s  
phase noise performance is excellent over tem-  
perature, shock, and process due to the oscillator’s  
monolithic structure. Power output is +13 dBm typical  
from a +5V supply. The voltage controlled oscillator  
is packaged in a leadless QFN 5x5 mm surface  
mount package, and requires no external matching  
components.  
11  
Electrical Specifications, TA = +25° C, Vcc = +5V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
7.8 - 8.8  
3.9 - 4.4  
GHz  
GHz  
Frequency Range  
RFOUT  
RFOUT/2  
+10  
+5  
+15  
+10  
dBm  
dBm  
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT  
Tune Voltage  
-115  
250  
2
dBc/Hz  
V
Vtune  
2
13  
270  
10  
Supply Current (Icc) (Vcc = +5.0V)  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
200  
mA  
µA  
dB  
Harmonics/Subharmonics  
1/2  
2nd  
3rd  
35  
10  
32  
dBc  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
5
MHz pp  
MHz/V  
MHz/°C  
10  
0.9  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 120  

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