Datasheet > HMC433_10

HMC433_10

更新时间： 2022-11-07 16:38:29

品牌	Logo	应用领域
HITTITE		/
页数	文件大小	规格书
6页	222K
描述
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8 GHz

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HMC433_10 数据手册

HMC433 / 433E

v04.0410

SMT GaAs HBT MMIC

DIVIDE-BY-4, DC - 8 GHz

Output Voltage Waveform,

Pin= 0 dBm, Fout= 882 MHz, T= 25 °C

300

200

100

-100

-200

-300

23.4

23.8

24.2

24.6

TIME (nS)

Absolute Maximum Ratings

Reliability Information

RF Input Power (Vcc = +3V)

Nominal +3V Supply to GND

Max Peak Flow Temperature

Storage Temperature

15 dBm

Junction Temperature to Maintain

1 Million Hour MTTF

135 °C

99 °C

-0.3V to +3.5V

260 °C

Nominal Junction Temperature

(T = 85 °C)

-65 to +125 °C

Thermal Resistance

(Junction to GND Paddle, 3V Supply)

83 °C/W

Operating Temperature

-40 to +85 °C

Typical Supply Current vs. Vcc

DC blocking capacitors are required at RF input and RF output ports.

Choose value for lowest frequency of operation.

Vcc (V)

Icc (mA)

2.70

3.0

3.30

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Note: Divider will operate over full voltage range shown above

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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