Datasheet > HMC435MS8G_07

HMC435MS8G_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HITTITE		开关光电二极管
页数	文件大小	规格书
6页	210K
描述
SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

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HMC435MS8G_07 数据手册

HMC435MS8G / 435MS8GE

v03.0607

SPDT NON-REFLECTIVE

SWITCH, DC - 4.0 GHz

Typical Applications

Features

The HMC435MS8G / HMC435MS8GE is ideal for:

• Basestation Infrastructure

• MMDS & 3.5 GHz WLL

High Isolation: 60 dB @ 1 GHz

50 dB @ 2 GHz

Positive Control: 0/+5V

51 dBm Input IP3

• CATV/CMTS

Non-Reﬂective Design

MS8G SMT Package, 14.8 mm²

• Test Instrumentation

Functional Diagram

General Description

The HMC435MS8G & HMC435MS8GE are non-

reﬂective DC to 4 GHz GaAs MESFET SPDT switches

in low cost 8 lead MSOP8G surface mount packages

with exposed ground paddles. The switch is ideal

for cellular/PCS/3G basestation applications yielding

50 to 60 dB isolation, low 0.8 dB insertion loss and

+50 dBm input IP3. Power handling is excellent

up through the 3.5 GHz WLL band with the switch

offering a P1dB compression point of +31 dBm. On-

chip circuitry allows positive voltage control of 0/+5

Volts at very low DC currents.

Electrical Specifications, T_A= +25° C, Vctl = 0/+5 Vdc, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

0.8

1.2

1.5

1.0

1.5

1.8

Insertion Loss

DC - 1.0 GHz

DC - 2.0 GHz

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

Isolation (RFC to RF1/RF2)

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

Return Loss (On State)

Return Loss (Off State)

0.5 - 4.0 GHz

Input Power for 1 dB Compression

dBm

0.5 - 1.0 GHz

0.5 - 2.5 GHz

0.5 - 4.0 GHz

Input Third Order Intercept

(Two-Tone Input Power = +7 dBm Each Tone)

dBm

Switching Speed

DC - 4.0 GHz

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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