Datasheet > 射频和微波 > 射频/微波衰减器> HMC346C8TR

HMC346C8TR

更新时间： 2024-02-20 21:54:56

品牌	Logo	应用领域
HITTITE		射频微波衰减器
页数	文件大小	规格书
6页	252K
描述
Variable Attenuator

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技术参数
数据手册

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HMC346C8TR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.71	射频/微波设备类型：	VARIABLE ATTENUATOR
Base Number Matches：	1

HMC346C8TR 数据手册

HMC346C8

v02.1008

GaAs MMIC SMT VOLTAGE-

VARIABLE ATTENUATOR, DC - 8 GHz

Absolute Maximum Ratings

RF Input Power

+18 dBm

+1.0 to -5V

150 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Control Voltage Range

Channel Temperature

Thermal Resistance

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

190 °C/W

-65 to +150 °C

-40 to +85 °C

Class 1A

Outline Drawing

NOTES:

1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS.

2. LEAD, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING).

3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER

ELECTROLYTIC NICKEL 50 MICROINCHES MIN.

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. TOLERANCES: .005 [0.13] UNLESS OTHERWISE SPECIFIED.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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