GaAs, SPDT Switch, Nonreflective,
0.1 GHz to 20 GHz
Data Sheet
HMC347B
FEATURES
FUNCTIONAL BLOCK DIAGRAM
RFC
Broadband frequency range: 0.1 GHz to 20 GHz
Nonreflective, 50 Ω design
Low insertion loss: 1.7 dB typical to 20 GHz
High isolation: 46 dB typical to 20 GHz
High input linearity
CTRLA
CTRLB
CTRLB
CTRLA
3
2
4
5
6
Input P1dB: 25 dBm typical
Input IP3: 41 dBm typical
RF2
RF1
1
7
50Ω
50Ω
High power handling
10
9
8
27 dBm through path
25 dBm terminated path
CTRLA CTRLB CTRLA
Figure 1.
10-pad, 1.3 mm × 0.85 mm × 0.102 mm CHIP
APPLICATIONS
Test instrumentations
Microwave radios and very small aperture terminals (VSATs)
Military radios, radars, electronic counter measure (ECMs)
Broadband telecommunications systems
GENERAL DESCRIPTION
The HMC347B is a broadband, nonreflective gallium arsenide
(GaAs), pseudomorphic high electron mobility transistor
(pHEMT) SPDT monolithic microwave integrated circuit
(MMIC) chip. The switch operates from 0.1 GHz to 20 GHz
with an insertion loss of 1.7 dB and an isolation of 46 dB to
20 GHz due to the implementation of on-chip, via hole structures.
The switch operates with two negative control voltage inputs
(VCTL = −5 V or 0 V), requires no supply, and has no current
consumption. All electrical performance data is acquired with
the RFx pads of the HMC347B connected to 50 Ω transmission
lines via one 3.0 mil × 0.5 mil ribbon of minimal length.
Rev. E
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