HMC283

更新时间： 2024-02-17 16:56:58

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器
页数	文件大小	规格书
8页	285K
描述
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

HMC283 技术参数

HMC283

v02.0500

MICROWAVE CORPORATION

GaAs MMIC MEDIUM POWER

AMPLIFIER, 17 - 40 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane

eutectically or with conductive epoxy (see HMC gen-

eral Handling, Mounting, Bonding Note.)

50 Ohm Microstrip transmission lines on 0.127 mm (5

mil) thick alumina thin ﬁlm substrates are recom-

mended for bringing RF to and from the chip (Figure 1).

If 0.254 mm (10 mil) thick alumina thin ﬁlm substrates

must be used, the die should be raised 0.150 mm (6

mils) so that the surface of the die is coplanar with the

surface of the substrate. One way to accomplish this is

to attach the 0.102 mm (4 mil) thick die to a 0.150 mm

(6 mil) thick molybdenum heat spreader (moly-tab)

which is then attached to the ground plane (Figure 2).

Microstrip substrates should be brought as close to the

die as possible in order to minimize bond wire length.

Typical die-to-substrate spacing is 0.076 mm (3 mils).

Figure 3: Typical HMC283 Assembly

Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) is recommended to minimize inductance on the RF ports.

0.025 mm (1 mil) diameter ball or wedge bonds are acceptable for DC bias connections.

RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutecti-

cally or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The

photo in ﬁgure 3 shows a typical assembly for the HMC283 MMIC chip.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 14

1 2 3 456 7 8

下载PDF

型号	品牌	描述	获取价格	数据表
HMC283_07	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283_08	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283_10	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1_01	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1_06	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格