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HMC223MS8_00

更新时间： 2022-12-28 04:28:29

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HMC223MS8_00 数据手册

HMC223MS8

v01.0300

MICROWAVE CORPORATION

GaAs MMIC T/R SWITCH

4.5 - 6.0 GHz

Typical Application Circuit

RF2

RF1

GND

Vdd

CTL

CMOS

Notes:

1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic

gates and to pin 4 of the RF switch.

2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface.

3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower

RF power capability) at bias voltages down to +3V.

4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be

placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances.

5. DC Blocking capacitors are not required for each RF port.

6. Evaluation PCB available.

See Section 8 for Layout Guidelines Application Note0

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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