HMC223MS8

更新时间： 2024-02-03 10:32:05

品牌	Logo	应用领域
HITTITE		射频和微波开关射频开关微波开关
页数	文件大小	规格书
4页	56K
描述
GaAS MMIC MSOP8 T/R SWITCH 4.5 - 6 GHz

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技术参数
数据手册

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HMC223MS8 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
JESD-609代码：	e0	射频/微波设备类型：	TRANSFER SWITCH
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

HMC223MS8 数据手册

HMC223MS8

MICROWAVE CORPORATION

HMC223MS8 MSOP8T/R SWITCH 4.5 - 6 GHz

FEBRUARY 2001

V01.0300

Truth Table

Functional Diagram

*Control Input Voltage Tolerances are ± 0.2 Vdc

RF2

GND

RF1

Bias

Control Control

Bias Control Input *

Signal Path State

Current Current Current

Vdd

Ivdd

(µA)

RF to

RF1

RF to RF2

(Vdc) (Vdc) (Vdc)

Vdd

-5

-10

-5

OFF

Vdd

-10

-23

-40

-5

OFF

-22

-5

OFF

Vdd

OFF

-40

Absolute Maximum Ratings

Caution: Do not operate in 1dB compression at power levels

above +33 dBm and do not 'hot switch' power levels greater

than +23dBm (V_dd= +5Vdc).

Bias Voltage Range (Vdd)

Control Voltage Range (A & B)

Storage Temperature

-0.2 to +12 Vdc

-0.2 to +Vdd Vdc

-65 to +150 deg C

-40 to +85 deg C

DC blocks are not required at ports RFC, RF1 and RF2.

Operating Temperature

Outline

0.116/0.120

(2.95/3.05)

GND

RF2

RF1

LOT NUMBER

HMC

223

XXXX

YYWW

0.116/0.120

(2.95/3.05)

0.188/0.196

(4.78/4.98)

DATE CODE

YY= YEAR

WW= WEEK

B RF +Vdd

PIN 1

PIN 1 (REF)

0.032/0.036

(0.81/0.91)

0.038/0.042

(0.96/1.07)

0.005/0.007

(0.13/0.18)

0-5 DEG

0.0256 TYP

(0.65)

0.012 TYP

(0.30)

0.021 MIN TYP

(0.53)

1) MATERIAL:

A) PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC,SILICA&SILICONEIMPREGNATED

B)LEADFRAMEMATERIAL:COPPERALLOY

2 . PLATING:LEAD-TINSOLDERPLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS)

12 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Web Site: www.hittite.com

7 - 90

1 234

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