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HMABAGR7A2R4N-XST4 PDF预览

HMABAGR7A2R4N-XST4

更新时间: 2023-12-06 20:01:26
品牌 Logo 应用领域
海力士 - HYNIX /
页数 文件大小 规格书
65页 1418K
描述
RDIMM

HMABAGR7A2R4N-XST4 数据手册

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Symbol  
Type  
Function  
Auto-precharge: A10 is sampled during Read/Write commands to determine whether  
Autoprecharge should be performed to the accessed bank after the Read/Write  
operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a  
Precharge command to determine whether the Precharge applies to one bank (A10  
LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected  
by bank addresses.  
A10 / AP  
Input  
Burst Chop: A12 / BC_n is sampled during Read and Write commands to determine if  
A12 / BC_n  
RESET_n  
Input burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped).  
See command truth table for details.  
CMOS Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive  
Input when RESET_n is HIGH. RESET_n must be HIGH during normal operation.  
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register, then  
Input/ CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the  
Output internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor  
specific data sheets to determine which DQ is used.  
DQ  
Data Strobe: output with read data, input with write data. Edge-aligned with read data,  
DQS0_t-DQS17_t, Input/ centered in write data. The data strobe DQS_t is paired with differential signals DQS_c,  
DQS0_c-DQS17_c Output respectively, to provide differential pair signaling to the system during reads and writes.  
DDR4 SDRAM supports differential data strobe only and does not support single-ended.  
TDQS9_t-TDQS17_t,  
TDQS9_c-TDQS17_c  
Provides a dummy load for x8 based RDIMMs where mixed populations of x4 and x8  
based RDIMMs are present.  
Input  
Input/ Provides for data bus inversion. Only possible for x8 based RDIMMs and where only x8  
Output based RDIMMs are on a channel.  
DBI0_n-DBI8_n  
DM0_n-DM8_n  
Provides for masking of a byte on WRITE commands to the SDRAMs. Only Possible x8  
Input  
based RDIMMs and where only x8 based RDIMMs are on a channel.  
Command and Address Parity Input : DDR4 Supports Even Parity check in SDRAMs with  
MR setting. Once it’s enabled via Register in MR5, then SDRAM calculates Parity with  
Input ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A17-A0. Input parity  
should be maintained at the rising edge of the clock and at the same time as command  
& address, with CS_n LOW.  
PAR  
Alert: Is multi functions, such as CRC error flag or Command and Address Parity error  
flag, as on Output signal. If there is an error in the CRC, then ALERT_n goes LOW for the  
period time interval and goes back HIGH. If there is an error in the Command Address  
Parity Check, then ALERT_n goes LOW for a relatively long period until on going SDRAM  
internal recovery transaction is complete. During Connectivity Test mode, this pin  
Output  
(Input)  
ALERT_n  
functions as an input.  
Using this signal or not is dependent on the system.  
RFU  
NC  
Reserved for Future Use: No on-DIMM electrical connection is present.  
No Connect: No on-DIMM electrical connection is present.  
VDD1  
Supply  
Supply  
Power Supply: 1.2 V ± 0.06 V  
Ground  
VSS  
Rev. 1.0 / Feb.2020  
7

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