Description
SK hynix Unbuffered DDR4 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.
These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as
PCs and workstations.
Features
• Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP - 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 3.6V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-
ferent bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD for ECC UDIMM
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
Ordering Information
# of
ranks
Part Number
Density
Organization
Component Composition
HMA851U6DJR6N-VK/WM/XN
HMA81GU6DJR8N-VK/WM/XN
HMA81GU7DJR8N-VK/WM/XN
HMA82GU6DJR8N-VK/WM/XN
HMA82GU7DJR8N-VK/WM/XN
4GB
8GB
512Mx64
1Gx64
1Gx72
2Gx64
2Gx72
512Mx16(H5AN8G6NDJR)*4
1Gx8(H5AN8G8NDJR)*8
1Gx8(H5AN8G8NDJR)*9
1Gx8(H5AN8G8NDJR)*16
1Gx8(H5AN8G8NDJR)*18
1
1
1
2
2
8GB
16GB
16GB
Rev. 1.3 / Jan.2020
3