Symbol
Type
Function
Auto-precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write
operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10
LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected
by bank addresses.
A10 / AP
Input
Burst Chop: A12 / BC_n is sampled during Read and Write commands to determine if
A12 / BC_n
RESET_n
Input burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped).
See command truth table for details.
CMOS Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive
Input when RESET_n is HIGH. RESET_n must be HIGH during normal operation.
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register, then
Input/ CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the
Output internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor
specific data sheets to determine which DQ is used.
DQ
Data Strobe: output with read data, input with write data. Edge-aligned with read data,
DQS0_t-DQS17_t, Input/ centered in write data. The data strobe DQS_t is paired with differential signals DQS_c,
DQS0_c-DQS17_c Output respectively, to provide differential pair signaling to the system during reads and writes.
DDR4 SDRAM supports differential data strobe only and does not support single-ended.
TDQS9_t-TDQS17_t,
TDQS9_c-TDQS17_c
Provides a dummy load for x8 based RDIMMs where mixed populations of x4 and x8
based RDIMMs are present.
Input
Input/ Provides for data bus inversion. Only possible for x8 based RDIMMs and where only x8
Output based RDIMMs are on a channel.
DBI0_n-DBI8_n
DM0_n-DM8_n
Provides for masking of a byte on WRITE commands to the SDRAMs. Only Possible x8
Input
based RDIMMs and where only x8 based RDIMMs are on a channel.
Command and Address Parity Input : DDR4 Supports Even Parity check in SDRAMs with
MR setting. Once it’s enabled via Register in MR5, then SDRAM calculates Parity with
Input ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A17-A0. Input parity
should be maintained at the rising edge of the clock and at the same time as command
& address, with CS_n LOW.
PAR
Alert: Is multi functions, such as CRC error flag or Command and Address Parity error
flag, as on Output signal. If there is an error in the CRC, then ALERT_n goes LOW for the
period time interval and goes back HIGH. If there is an error in the Command Address
Parity Check, then ALERT_n goes LOW for a relatively long period until on going SDRAM
internal recovery transaction is complete. During Connectivity Test mode, this pin
Output
(Input)
ALERT_n
functions as an input.
Using this signal or not is dependent on the system.
RFU
NC
Reserved for Future Use: No on-DIMM electrical connection is present.
No Connect: No on-DIMM electrical connection is present.
VDD1
Supply
Supply
Power Supply: 1.2 V ± 0.06 V
Ground
VSS
Rev. 1.7 / Aug.2019
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