HM45P02Q PDF预览

HM45P02Q

更新时间: 2025-08-03 18:26:31
品牌 Logo 应用领域
华之美 - HMSEMI /
页数 文件大小 规格书
6页 548K
描述
低压MOS

HM45P02Q 数据手册

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HM45P02Q  
P-Channel Enhancement Mode Power MOSFET  
Description  
The HM45P02Q uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS =-20V,ID =-45A  
Schematic diagram  
RDS(ON) < 7m@ VGS=-4.5V  
R
DS(ON) < 9m@ VGS=-2.5V  
DS(ON) < 12m@ VGS=-1.8V  
R
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Pin Assignment  
Application  
Load switch  
Battery protection  
DFN 3.3x3.3 EP top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
HM45P02Q  
HM45P02Q  
DFN 3.3x3.3 EP  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±12  
VGS  
-45  
-35  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
-200  
A
Maximum Power Dissipation  
Derating factor  
80  
W
W/℃  
PD  
0.64  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
1.6  
/W  

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