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HI63SD PDF预览

HI63SD

更新时间: 2024-09-30 19:45:03
品牌 Logo 应用领域
HUTSON 三端双向交流开关栅极
页数 文件大小 规格书
2页 158K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 3A I(T)RMS, TO-5,

HI63SD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.91
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:4 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:2.2 V
最大维持电流:15 mAJEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
最大漏电流:0.75 mA元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:3 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

HI63SD 数据手册

 浏览型号HI63SD的Datasheet PDF文件第2页 
MAXIMUM RATINGS  
SYMBOL VDRM  
DEVICE NUMBERS  
UNITS  
200  
400  
600  
HI23SS  
HI43SS  
HI63SS  
HI23SD  
HI43SD  
HI63SD  
HI23SG  
HI43SG  
HI63SG  
HI23SH  
HI43SH  
HI63SH  
REPETITIVE PEAK OFF-STATE VOLTAGE (1)  
GATE OPEN, AND TJ = 110° C  
VOLT  
VDRM  
RMS ON-STATE CURRENT AT TC = 80º C AND  
CONDUCTION, ANGLE OF 360º  
IT(RMS)  
ITSM  
3.0  
30  
1
3.0  
30  
1
3.0  
30  
1
3.0  
30  
1
AMP  
AMP  
PEAK SURGE (NON-REPETITIVE) ON-STATE  
CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ  
PEAK GATE - TRIGGER CURRENT  
FOR 3µSEC. MAX.  
IGTM  
PGM  
AMP  
PEAK GATE–POWER DISSIPATION AT  
IGT IGTM  
20  
20  
20  
20  
WATT  
AVERAGE GATE - POWER DISSIPATION  
PG(AV)  
TSTG  
0.2  
0.2  
0.2  
0.2  
WATT  
°C  
STORAGE TEMPERATURE RANGE  
-40 to +150  
-40 to +110  
OPERATING TEMPERATURE RANGE, TJ  
TOPER  
°C  
ELECTRICAL CHARACTERISTICS  
AT SPECIFIED CASE TEMPERATURE  
PEAK OFF - STATE CURRENT (1) GATE OPEN  
TC = 110° C VDRM = MAX. RATING  
MAXIMUM ON - STATE VOLTAGE, (1) AT  
TC = 25° C AND IT = RATED AMPS  
DC HOLDING CURRENT, (1) GATE OPEN  
AND TC = 25° C  
MA  
MAX.  
VOLT  
MAX.  
MA  
IDRM  
VTM  
IHO  
0.75  
1.85  
5
0.75  
0.75  
2.20  
15  
0.75  
2.20  
15  
2.20  
15  
MAX.  
CRITICAL RATE-OF-RISE OFF-STATE  
VOLTAGE, (1) FOR VD = VDRM GATE OPEN,  
TC = 110° C  
CRITICAL RATE-OF-RISE OF COMMUNICATION  
VOLTAGE, (1) AT TC = 80° C, GATE  
ENENERGIZED, VD = VDRM IT = IT (RMS)  
CRITICAL  
dv/dt  
3
1
4
1
5
1
7
1
V/µSEC.  
V/µSEC.  
COMMUTATING  
dv/dt  
DC GATE - TRIGGER CURRENT FOR  
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C  
(T2 + GATE + T2 - GATE-) Q 1 & 3  
MA  
MAX.  
IGT  
3
5
10  
25  
(T2 + GATE - T2 - GATE +) Q 2 & 4  
DC GATE - TRIGGER VOLTAGE FOR  
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C  
VOLT  
MAX.  
VGT  
2.2  
2.2  
2.2  
2.2  
GATE CONTROLLED TURN-ON TIME  
FOR VD = VDRM IGT = 80MA  
TR = 0.1 µSEC. IT = 6A (PEAK) AND TC = 25° C  
TGT  
2.2  
4
2.2  
4
2.2  
4
2.2  
4
µSEC.  
°C / WATT  
TYP  
R0J-C  
THERMAL RESISTANCE, JUNCTION-TO-CASE  
*NOTES:  
(1) ALL VALUES APPLY IN EITHER DIRECTION  
SOLID STATE CONTROL DEVICES  
10  

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