Datasheet > HFD2N65S

HFD2N65S

更新时间： 2022-12-21 13:53:47

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	863K
描述
650V N-Channel MOSFET

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数据手册

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HFD2N65S 数据手册

Fig 12. Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

( 0.5 rated V_DS

)

R_G

10%

V_in

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t_on

t_off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS-- V_DD

----

E_AS

L_LI_AS

V_DS

V_DD

BV_DSS

I_AS

I_D

R_G

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

◎ SEMIHOW REV.A0,Mar 2010

1 2 3 456 7 8

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