Datasheet > HFC1N70

HFC1N70

更新时间： 2022-12-22 05:16:51

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
7页	744K
描述
700V N-Channel MOSFET

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数据手册

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HFC1N70 数据手册

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

_GS= 10V

V_GS= 20V

* Note : T_J= 25^oC

0.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

I_D, Drain Current [A]

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

250

200

150

100

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

iss

V_DS= 140V

V_DS= 350V

V_DS= 560V

C_oss

※ Note ;

1. V_GS= 0 V

2. f = 1 MHz

rss

* Notes : I_D= 0.8 A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

◎ SEMIHOW REV.A0,Dec 2008

1 234 5 6 7

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