Datasheet > HFA45HI120CPBF

HFA45HI120CPBF

更新时间： 2024-09-30 20:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网
页数	文件大小	规格书
3页	65K
描述
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, TO-259AA

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HFA45HI120CPBF 数据手册

PD-20374A

HFA45HI120C

Ultrafast, Soft Recovery Diode

HEXFRED^TM

(ISOLATED BASE)

Features

V_R= 1200V

V_F= 3.9V

• Reduced RFI and EMI

• Reduced Snubbing

• Extensive Characterization of Recovery Parameters

• Hermetic

• Electrically Isolated

• Ceramic Eyelets

Q_rr= 675nC

ANODE COMMON ANODE

CATHODE

Description

HEXFRED^TMdiodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems.

An extensive characterization of the recovery behavior

for different values of current, temperature and di/dt

simplifies the calculations of losses in the operating

conditions. The softness of the recovery eliminates the

need for a snubber in most applications. These devices

are ideally suited for power converters, motors drives and

other applications where switching losses are significant

portion of the total losses.

TO-259AA

Absolute Maximum Ratings (per Leg)

Parameter

D.C. Reverse Voltage

Max.

1200

Units

V_R

I_F@ T_C= 100°C

Continuous Forward Current

I_FSM@ T_C= 25°C Single Pulse Forward Current

190

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

104

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

Thermal - Mechanical Characteristics

Parameter

Junction-to-Case, Single Leg Conducting

Weight

Typ.

—

Max.

1.2

Units

R_θJC

°C/W

10.9

—

Note: D.C. = 50% rect. wave

1/2 sine wave, 60 Hz , P.W. = 8.33 ms

www.irf.com

6/23/99

12 3

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