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HFA40HF120CPBF PDF预览

HFA40HF120CPBF

更新时间: 2024-01-18 17:23:25
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管软恢复二极管
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5页 120K
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HFA40HF120CPBF 数据手册

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PD-20376  
HFA40HF120  
Ultrafast, Soft Recovery Diode  
HEXFREDTM  
(ISOLATEDBASE)  
VR = 1200V  
VF = 3.1V  
Features  
• Reduced RFI and EMI  
• Reduced Snubbing  
• Extensive Characterization of Recovery Parameters  
• Hermetic  
Qrr = 510 nC  
• Surface Mount  
di(rec)M/dt = 350A/µs  
CATHODE  
ANODE  
Description  
HEXFREDTM diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems.  
An extensive characterization of the recovery behavior  
for different values of current, temperature and di/dt  
simplifies the calculations of losses in the operating  
conditions. The softness of the recovery eliminates the  
need for a snubber in most applications. These devices  
are ideally suited for power converters, motors drives and  
other applications where switching losses are significant  
portion of the total losses.  
SMD -1  
Absolute Maximum Ratings (per Leg)  
Parameter  
D.C. Reverse Voltage  
Max.  
1200  
Units  
V
VR  
IF @ TC = 100°C  
Continuous Forward Current   
11  
A
IFSM @ TC = 25°C Single Pulse Forward Current ‚  
190  
PD @ TC = 25°C  
Maximum Power Dissipation  
Operating Junction and  
83  
W
TJ  
-55 to +150  
°C  
TSTG  
Storage Temperature Range  
Thermal - Mechanical Characteristics  
Parameter  
Junction-to-Case, Single Leg Conducting  
Weight  
Typ.  
Max.  
1.5  
Units  
RθJC  
°C/W  
g
2.6  
Note:  D.C. = 50% rect. wave  
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms  
www.irf.com  
1
6/30/99  

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