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HE8812SG PDF预览

HE8812SG

更新时间: 2024-02-03 17:34:59
品牌 Logo 应用领域
日立 - HITACHI 半导体红外LED光电二极管
页数 文件大小 规格书
6页 142K
描述
GaAlAs Infrared Emitting Diode

HE8812SG 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.40.20.00Factory Lead Time:12 weeks 6 days
风险等级:5.14Is Samacsys:N
光电设备类型:INFRARED LEDBase Number Matches:1

HE8812SG 数据手册

 浏览型号HE8812SG的Datasheet PDF文件第1页浏览型号HE8812SG的Datasheet PDF文件第2页浏览型号HE8812SG的Datasheet PDF文件第3页浏览型号HE8812SG的Datasheet PDF文件第4页浏览型号HE8812SG的Datasheet PDF文件第5页 
HE8812SG  
Cautions  
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third partys  
patent, copyright, trademark, or other intellectual property rights for information contained in this  
document. OPJ bears no responsibility for problems that may arise with third partys rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However,  
contact our sales office before using the product in an application that demands especially high quality  
and reliability or where its failure or malfunction may directly threaten human life or cause risk of  
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,  
safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for  
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions  
and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the  
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or  
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the  
equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage  
due to operation of the OPJ product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from OPJ.  
7. Contact our sales office for any questions regarding this document or OPJ products.  
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The  
laser beam shall be observed or adjusted through infrared camera or equivalent.  
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very  
low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or  
performing chemical experiments, when you handle the product.  
When disposing of the product, please follow the laws of your country and separate it from other waste  
such as industrial waste and household garbage.  
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook  
issued by OPJ unless otherwise specified.  
Sales Offices  
Opto Device Business Unit Opnext Japan, Inc.  
190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan  
Tel: (0267) 22-4111  
For the detail of Opnext, Inc., see the following homepage:  
Japan (Japanese)  
http://japan.opnext.com/optodevice/  
Other area (English)  
http://www.opnext.com/optodevice/  
Copyright © Opnext Japan, Inc., 2003. All rights reserved. Printed in Japan.  
Colophon 0.0  
Rev.1, Jan. 2003, page 6 of 6  

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