Datasheet > HE8050-E-T9N-A-B

HE8050-E-T9N-A-B

更新时间： 2024-01-16 02:17:20

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描述
Transistor

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技术参数
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HE8050-E-T9N-A-B 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

HE8050-E-T9N-A-B 数据手册

HE8050

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

P_D

VALUE

UNIT

Collector Dissipation(Ta=25°C)

Collector Current

I_C

1.5

Junction Temperature

T_J

+150

-40 ~ +150

°C

Storage Temperature

T_STG

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=100µA,I_E=0

I_C=2mA,I_B=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I_E=100µA,I_C=0

V_CB=35V,I_E=0

100

Emitter Cut-Off Current

I_EBO

V_EB=6V,I_C=0

h_FE1

V_CE=1V,I_C=5mA

V_CE=1V,I_C=100mA

V_CE=1V,I_C=800mA

135

DC Current Gain

h_FE2

160 500

110

h_FE3

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

V_CE(SAT)I_C=800mA,I_B=80mA

V_BE(SAT)I_C=800mA,I_B=80mA

0.5

1.2

V_BE

f_T

V_CE=1V,I_C=10mA

V_CE=10V,I_C=50mA

1.0

100

MHz

_CB=10V,I_E=0

Output Capacitance

Cob

9.0

f=1MHz

ꢀ

CLASSIFICATION of h_FE

RANK

RANGE

120-200

160-300

250-500

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R211-018,A

www.unisonic.com.tw

123 4

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