Datasheet > HE8050-E-T9N-A-B

HE8050-E-T9N-A-B

更新时间： 2024-02-02 00:26:24

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描述
Transistor

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技术参数
数据手册

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HE8050-E-T9N-A-B 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

HE8050-E-T9N-A-B 数据手册

HE8050

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Static Characteristics

DC Current Gain

0.5

0.4

=3.0mA

=2.5mA

=2.0mA

VCE=1V

0.3

0.2

=1.5mA

=1.0mA

=0.5mA

0.1

0.4

0.8

1.2

1.6

2.0

-1

Collector-Emitter Voltage ( V)

Collector Current, Ic (mA)

Base-Emitter on Voltage

Saturation Voltage

Ic=10*I

CE=1V

VBE(SAT)

CE(SAT)

-1

0.2

0.4

0.6

0.8

1.0

1.2

Base-Emitter Voltage (V)

Collector Current, Ic (mA)

Current Gain-Bandwidth

Product

Collector Output Capacitance

VCE=10V

f=1MHz

IE=0

Collector Current, Ic (mA)

Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R211-018,A

www.unisonic.com.tw

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