5秒后页面跳转
HDS10M(LS) PDF预览

HDS10M(LS)

更新时间: 2023-12-06 20:03:06
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
4页 378K
描述
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

HDS10M(LS) 数据手册

 浏览型号HDS10M(LS)的Datasheet PDF文件第2页浏览型号HDS10M(LS)的Datasheet PDF文件第3页浏览型号HDS10M(LS)的Datasheet PDF文件第4页 
HDS10M(LS)  
REVERSE VOLTAGE 1000 Volts  
GLASS PASSIVATED  
SURFACE MOUNT BRIDGE RECTIFIER  
FORWARD CURRENT 1.0 Ampere  
FEATURES  
HDS  
Ideal for printed circuit board  
Reliable construction utilizing molded  
HDS  
DIM  
A
A1  
A2  
A3  
b
C
D
D1  
e
E
MIN  
1.20  
0.43  
0.00  
1.20  
0.45  
0.10  
4.85  
0.45  
MAX  
1.30  
0.63  
0.15  
1.40  
0.75  
0.30  
5.25  
0.85  
plastic technique  
MECHANICAL DATA  
Package Material: Greenmolding compound, UL  
flammability classification 94V-0,(No Br. Sb. CI.)  
Halogen-free”  
Polarity indicator: As marked on the body  
Weight: 92.3mg (Approximate)  
Marking Code: HDS10M  
2.54 BSC.  
4.25  
6.40  
0.45  
5.20  
0.40  
4.65  
6.80  
0.85  
5.60  
0.80  
E1  
E2  
G
L
M
N
7° TYP.  
7° TYP.  
All dimension in  
millimeter  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
ABSOLUTE RATINGS  
PARAMETER  
Maximum repetitive peak reverse voltage  
Maximum DC blocking voltage  
SYMBOL  
VALUE  
1000  
1000  
1.0  
UNIT  
VRRM  
VDC  
I(AV)  
V
V
A
Average rectified output current per device  
@TA =75 (Note 1)  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load  
Peak forward surge current 1ms single half  
sine-wave superimposed on rated load  
@ TA=25°C  
@ TA=125°C (Note 1)  
@ TA=25°C  
@ TA=125°C (Note 1)  
30  
24  
60  
48  
IFSM  
A
IFSM  
A
I2t rating for fusing ( t = 8.3ms)  
I2t  
2.39  
A2S  
°C  
Operating and storage temperature range  
TJ ,TSTG  
-55 to +150  
STATIC ELECTRICAL CHARACTERISTICS  
PARAMETER  
Forward voltage (Note1)  
Leakage current  
TEST CONDITION  
SYMBOL  
MAX.  
UNIT  
V
IF = 0.5A  
TA = 25°C  
VF  
IR  
0.95  
TA = 25°C  
TA = 125°C (Note1)  
5
100  
VR = 1000V  
uA  
Typical junction capacitance (Note 2)  
CT  
8.2  
pF  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TYP.  
UNIT  
RthJC  
RthJL  
RthJA  
30  
18  
40  
Typical thermal resistance (Note 3)  
°C/W  
Note :  
REV.1, Nov.-2021, KBDB48  
(1) Perform static test after the temperature of oven is steady 20 minutes.  
(2) Measured at 1.0MHz and applied reverse voltage of 4.0V DC  
(3) Thermal resistance junction to case, lead and ambient in accordance with JESD-51.  
Unit mounted on glass-epoxy substrate with foot print copper pad per pin  

与HDS10M(LS)相关器件

型号 品牌 描述 获取价格 数据表
HDS10M-13 DIODES Bridge Rectifier Diode,

获取价格

HDS10U30X SEMIHOW SwitchmodeFull Plastic Dual Ultrafast Power Rectifier

获取价格

HDS10U40X SEMIHOW SwitchmodeFull Plastic Dual Ultrafast Power Rectifier

获取价格

HDS10U50X SEMIHOW SwitchmodeFull Plastic Dual Ultrafast Power Rectifier

获取价格

HDS10U60X SEMIHOW SwitchmodeFull Plastic Dual Ultrafast Power Rectifier

获取价格

HDS-1240E ETC 12-Bit Digital-to-Analog Converter

获取价格