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HCS21HMSR PDF预览

HCS21HMSR

更新时间: 2024-01-25 14:47:29
品牌 Logo 应用领域
英特矽尔 - INTERSIL
页数 文件大小 规格书
8页 187K
描述
Radiation Hardened Dual 4-Input AND Gate

HCS21HMSR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DFP, FL14,.3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.74
Is Samacsys:N其他特性:RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY
系列:HC/UHJESD-30 代码:R-CDFP-F14
JESD-609代码:e0负载电容(CL):50 pF
逻辑集成电路类型:AND GATE功能数量:2
输入次数:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装等效代码:FL14,.3封装形状:RECTANGULAR
封装形式:FLATPACK电源:5 V
Prop。Delay @ Nom-Sup:22 ns传播延迟(tpd):20 ns
认证状态:Not Qualified施密特触发器:NO
筛选级别:38535V;38534K;883S子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:200k Rad(Si) VBase Number Matches:1

HCS21HMSR 数据手册

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Specifications HCS21MS  
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS  
OSCILLATOR  
OPEN  
GROUND  
1/2 VCC = 3V ± 0.5V  
VCC = 6V ± 0.5V  
50kHz  
25kHz  
STATIC BURN-IN I TEST CONDITIONS (Note 1)  
3, 6, 8, 11  
1, 2, 4, 5, 7, 9, 10, 12,  
13  
-
14  
-
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)  
3, 6, 8, 11  
7
-
1, 2, 4, 5, 9, 10, 12,  
13, 14  
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)  
-
7
3, 6, 8, 12  
14  
1, 2, 4, 5, 9, 10,  
12, 13  
NOTES:  
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.  
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in.  
TABLE 9. IRRADIATION TEST CONNECTIONS  
OPEN  
GROUND  
VCC = 5V ± 0.5V  
1, 2, 4, 5, 9, 10, 12, 13, 14  
3, 6, 8, 11  
7
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.  
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.  
Spec Number 518762  
57  

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