Datasheet > HBAT54_08

HBAT54_08

更新时间： 2024-09-28 12:23:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
5页	111K
描述
Silicon Schottky Barrier Double Diodes

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中文翻译

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数据手册

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HBAT54_08 数据手册

Spec. No. : HE6854

Issued Date : 1997.04.28

Revised Date : 2008.07.15

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HBAT54 Series

Description

Silicon Schottky Barrier Double Diodes

SOT-23

Diagram:

• HBAT54: Single Diode, also available as double diodes.

• HBAT54A: Common Anode.

• HBAT54C: Common Cathode.

• HBAT54S: Series Connected.

HBAT54

HBAT54A

Features

These diodes feature very low turn-on voltage and fast switching. There is a PN

junction guard ring against excessive voltage such as electronics attic discharges

protects these devices.

HBAT54C

HBAT54S

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................................................ -65~+125 °C

Junction Temperature ................................................................................................................................... +125 °C

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C).............................................................................................................. 230 mW

• Maximum Voltages and Currents (T_A=25°C)

Repetitive Peak Reverse Voltage....................................................................................................................... 30 V

Forward Continuous Current ......................................................................................................................... 200 mA

Repetitive Peak Forward Current ................................................................................................................ 300 mA

Surge Forward Current (tp<1s)...................................................................................................................... 600 mA

Electrical Characteristics (T_A=25°C)

Characteristic

Symbol

V_(BR)

V_F(1)

V_F(2)

V_F(3)

V_F(4)

V_F(5)

I_R

Condition

Min.

Max.

Unit

Reverse breakdown Voltage

I_R=10uA

I_F=0.1mA

I_F=1mA

240

320

400

500

1000

2.0

Forward Voltage

I_F=10mA

I_F=30mA

I_F=100mA

V_R=25V

Reverse Current

Total Capacitance

C_T

V_R=1V, f=1MHz

I_F=I_R=10mA, R_L=100Ω,

measured at I_R=1mA

Reverse Recovery Time

T_rr

HBAT54, HBAT54A, HBAT54C, HBAT54S

HSMC Product Specification

12 3 4 5

中文翻译

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与HBAT54_08相关器件

型号	品牌	获取价格	描述	数据表
HBAT-5400	AVAGO	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400	AGILENT	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-BLK	AGILENT	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-BLK	AVAGO	获取价格	UNIDIRECTIONAL, SILICON, TVS DIODE, SOT-23, 3 PIN
HBAT-5400-BLKG	AVAGO	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-TR1	AGILENT	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-TR1	AVAGO	获取价格	UNIDIRECTIONAL, SILICON, TVS DIODE, SOT-23, 3 PIN
HBAT-5400-TR1G	AVAGO	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-TR2	AGILENT	获取价格	High Performance Schottky Diode for Transient Suppression
HBAT-5400-TR2	AVAGO	获取价格	UNIDIRECTIONAL, SILICON, TVS DIODE, SOT-23, 3 PIN

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