HAT1002F
Silicon P Channel Power MOS FET
Application
SOP–8
High speed power switching
5
6
7
Features
8
4
• Low on–resistance
• Capable of 4 V gate drive
• Low drive current
3
5
D
6
D
7
D
8
D
2
1
• High density mounting
4
G
1, 2, 3
4
Source
Gate
Ordering Information
5, 6, 7, 8 Drain
————————————————————
S
1
S
2
S
3
Hitachi Code
FP–8D
————————————————————
EIAJ Code
SC–527–8A
————————————————————
JEDEC Code
—
————————————————————
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
–30
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
–3.5
A
D
———————————————————————————————————————————
Drain peak current
I
*
–14
A
D(pulse)
———————————————————————————————————————————
Body–drain diode reverse drain current
I
–3.5
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
1.0
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 µs, duty cycle ≤ 1 %
** When using the glass epoxy board (40 x 40 x 1.6 mm)
*