Datasheet > HAT1006F

HAT1006F

更新时间： 2022-01-23 07:51:00

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HAT1006F 数据手册

HAT1006F

Silicon P Channel Power MOF FET

Application

SOP–8

Power switching

Features

D D

• Low on–resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Ordering Information

1, 2, 3

5, 6, 7, 8 Drain

Source

Gate

————————————————————

Hitachi Code

FP–8D

————————————————————

EIAJ Code

SC–527–8A

————————————————————

JEDEC Code

—

————————————————————

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

–60

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

–2.5

———————————————————————————————————————————

Drain peak current

–10

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

–2.5

———————————————————————————————————————————

Channel dissipation

Pch**

1.0

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** When using the glass epoxy board (40 x 40 x 1.6 mm)

12 3 4 5 6

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