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H5TQ2G43MFR-S6C PDF预览

H5TQ2G43MFR-S6C

更新时间: 2024-02-06 02:14:11
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
74页 1404K
描述
DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA82, HALOGEN FREE, FBGA-82

H5TQ2G43MFR-S6C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA82,11X13,32
针数:82Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.74访问模式:MULTI BANK PAGE BURST
最长访问时间:0.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):400 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B82
JESD-609代码:e1长度:13.3 mm
内存密度:2147483648 bit内存集成电路类型:DDR DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:82
字数:536870912 words字数代码:512000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:512MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA82,11X13,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
电源:1.5 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:4,8
最大待机电流:0.013 A子类别:DRAMs
最大压摆率:0.267 mA最大供电电压 (Vsup):1.575 V
最小供电电压 (Vsup):1.425 V标称供电电压 (Vsup):1.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:12.2 mm
Base Number Matches:1

H5TQ2G43MFR-S6C 数据手册

 浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第2页浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第3页浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第4页浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第5页浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第6页浏览型号H5TQ2G43MFR-S6C的Datasheet PDF文件第7页 
H5TQ2G43MFR-xxC  
H5TQ2G83MFR-xxC  
2Gb DDR3 SDRAM  
H5TQ2G43MFR-xxC  
H5TQ2G83MFR-xxC  
** Contents are subject to change at any time without notice.  
Rev. 0.2 / Feb 2009  
1
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  

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