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H11G1

更新时间: 2024-09-24 22:51:07
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摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 303K
描述
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

H11G1 数据手册

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Order this document  
by H11G1/D  
SEMICONDUCTOR TECHNICAL DATA  
[CTR = 1000% Min]  
[CTR = 1000% Min]  
GlobalOptoisolator  
[CTR = 200% Min]  
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs  
optically coupled to silicon photodarlington detectors which have integral  
base–emitter resistors. The on–chip resistors improve higher temperature  
leakage characteristics. Designed with high isolation, high CTR, high voltage  
and low leakage, they provide excellent performance.  
*Motorola Preferred Devices  
STYLE 1 PLASTIC  
High CTR, H11G1 & H11G2 — 1000% (@ I = 10 mA), 500% (@ I = 1 mA)  
F
F
High V  
(BR)CEO  
, H11G1 — 100 Volts, H11G2 — 80 Volts  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
6
1
Applications  
Interfacing and coupling systems of different potentials and impedances  
Phase and Feedback Controls  
STANDARD THRU HOLE  
CASE 730A–04  
General Purpose Switching Circuits  
Solid State Relays  
SCHEMATIC  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
1
6
Rating  
Symbol  
Value  
Unit  
INPUT LED  
Reverse Voltage  
V
R
6
60  
3
Volts  
mA  
2
3
5
4
Forward Current — Continuous  
I
F
F
Forward Current — Peak  
Pulse Width = 300 µs, 2% Duty Cycle  
I
Amps  
LED Power Dissipation @ T = 25°C  
P
120  
1.41  
mW  
mW/°C  
A
D
PIN 1. ANODE  
2. CATHODE  
3. N.C.  
Derate above 25°C  
OUTPUT DETECTOR  
Collector–Emitter Voltage  
4. EMITTER  
5. COLLECTOR  
6. BASE  
H11G1  
H11G2  
H11G3  
V
V
100  
80  
55  
Volts  
CEO  
Emitter–Base Voltage  
7
Volts  
mA  
EBO  
Collector Current — Continuous  
I
C
150  
Detector Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
150  
1.76  
mW  
mW/°C  
A
TOTAL DEVICE  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Operating Junction Temperature Range  
T
55 to +100  
55 to +150  
260  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 s)  
T
°C  
L
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
GlobalOptoisolator is a trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995  

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