ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GTM
CORPORATION
GI122
N P N E P I T A X I A L P L AN A R T R A N S I S T O R
Description
The GI122 is designed for use in general purposes and low speed switching applications.
Features
ԦHigh DC current gain
ԦBuilt-in a damper diode at E-C
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
6.40
5.20
6.80
7.20
Max.
6.80
5.50
7.20
7.80
Min.
0.50
2.20
0.45
0.45
0.90
5.40
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
G
H
J
K
L
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
Unit
к
к
V
Junction Temperature
Storage Temperature
+150
Tstg
-55 ~ +150
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
BVCBO
BVCEO
BVEBO
IC
100
100
5
V
V
5
A
Total Power Dissipation(Tc=25к)
PD
20
W
Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
Min.
100
100
5
-
-
-
-
-
-
-
1
1
-
Typ.
Max.
-
-
Unit
V
V
Test Conditions
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
V
V
V
I
I
I
V
V
V
V
C
=1mA, I
=30mA, I
=1mA, I
E=0
C
B=0
-
V
E
C
=0
I
I
I
CBO
CEO
EBO
10
10
2
2
4
4
2.5
-
ꢀA
ꢀA
mA
V
V
V
V
K
K
pF
CB=100V, I
CE=50V, I =0
EB=5V, I =0
E=0
B
C
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
1
2
C
=3A, I
=5A, I
=5A, I
B=16mA
B=20mA
B=50mA
C
C
CE=3V, I
CE=3V, I
CE=3V, I
C
C
C
=3A
*
*
hFE
1
2
=500mA
=3A
CB=10V, f=1MHz
hFE
-
Cob
200
* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%
GI122
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