Datasheet > GI1386

GI1386

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	213K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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数据手册

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GI1386 数据手册

ISSUED DATE :2005/07/25

REVISED DATE :

GTM

CORPORATION

1386

P N P E P I T A X I A L S I L I C O N T R A N S I S T O R

Description

The GI1386 is designed for low frequency applications.

Features

ԦLow VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)

ԦExcellent DC current gain characteristics

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

+150

-55~+150

-30

Unit

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

VCEO

-20

-6

-5

-10

EBO

*Collector Current (Pulse)

Total Power Dissipation (T

C=25к)

Electrical Characteristics (Ta = 25ć)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

-30

-20

-6

=-50uA , I

=-1mA, IB

=-0.1A

=-0.5A

=50mA, f=30MHz

=0, f=1MHz

E=-50uA ,IC

CBO

-500

-1

580

CB=-20V, IE

EBO

EB=-5V, I

=-4A, I

*VCE(sat)

*hFE

CE=-2V, I

CE=-6V, IE

CB=-20V, I

120

MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

82 - 180

120 - 270

180 - 390

370 - 580

GI1386

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