Datasheet > GI127

GI127

更新时间： 2024-11-09 03:39:23

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	170K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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数据手册

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GI127 数据手册

ISSUED DATE :2004/12/15

REVISED DATE :2005/12/23B

GTM

CORPORATION

GI127

P N P E P I T A X I A L P L A N A R T R A N S I S T O R

Description

The GI127 is designed for use in general purposes and low speed switching applications.

Features

ԦHigh DC current gain

ԦBuilt-in a damper diode at E-C

Package Dimensions

TO-251

Millimeter

REF.

Min.

6.40

5.20

6.80

7.20

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

2.30 REF.

0.60

0.90

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

Unit

Junction Temperature

Storage Temperature

+150

-55 ~ +150

-100

-5

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

BVCBO

BVCEO

BVEBO

-5

Total Power Dissipation(Tc=25к)

Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)

Symbol

BVCBO

BVCEO

BVEBO

Min.

-100

-5

Typ.

Max.

Unit

Test Conditions

=-1mA, I

=-30mA, I

=-1mA, I

E=0

B=0

CBO

CEX

EBO

-10

-2

-4

-2.8

ꢀA

CB=-100V, I

CE=-100V, VBE(off)=-1.5V

EB=-5V, I =0

E=0

*VCE(sat)

*VBE(sat)

*VBE(on)

=-3A, I

=-5A, I

=-12mA

=-20mA

=-50mA

CE=-3V, I

=-3A

*hFE

Cob

=-500mA

=-3A

CB=-10V, f=0.1MHz

300

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GI127

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