Datasheet > GD1SS355

GD1SS355

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	148K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GD1SS355 数据手册

ISSUED DATE :2004/09/20

REVISED DATE :

GTM CORPORATION

GD1SS355

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 9 0 V, C U R R E N T 0 . 1 A

Description

The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability.

Package Dimensions

Millimeter

REF.

Min.

0.85

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+125

-55 ~ +125

Unit

Junction Temperature

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

Maximum Peak Repetitive Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Maximum Reverse Recovery Time (Note2)

Maximum Average Forward Rectified Current

Total Power Dissipation

0.5

3.0

nSec

T_RR

4.0

0.1

225

Characteristics at Ta = 25к

Characteristics

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

Symbol

V_F

Max

1.20

0.1

Unit

Test Condition

IF = 100mA

VR = 80V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.

2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt.

3. ESD sensitive product handling required.

GD1SS355

Page : 1/2

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