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GD200HFF120C2S PDF预览

GD200HFF120C2S

更新时间: 2024-11-12 17:01:11
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 183K
描述
C2.0-Half Bridge

GD200HFF120C2S 数据手册

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GD200HFF120C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD200HFF120C2S  
1200V/200A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
switching speed as well as short circuit ruggedness.  
They are designed for the applications such as  
electronic welder and inductive heating.  
Features  
Low VCE(sat) Trench IGBT technology  
CE(sat) with positive temperature coefficient  
V
Low switching losses  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Switching mode power supply  
Inductive heating  
Electronic welder  
Equivalent Circuit Schematic  
©2019 STARPOWER Semiconductor Ltd.  
7/8/2019  
1/9  
Preliminary  

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