5秒后页面跳转
GD200FFY120C6S PDF预览

GD200FFY120C6S

更新时间: 2024-11-12 17:01:55
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 219K
描述
C6.2-3 Phase Bridge with NTC

GD200FFY120C6S 数据手册

 浏览型号GD200FFY120C6S的Datasheet PDF文件第2页浏览型号GD200FFY120C6S的Datasheet PDF文件第3页浏览型号GD200FFY120C6S的Datasheet PDF文件第4页浏览型号GD200FFY120C6S的Datasheet PDF文件第5页浏览型号GD200FFY120C6S的Datasheet PDF文件第6页浏览型号GD200FFY120C6S的Datasheet PDF文件第7页 
GD200FFY120C6S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD200FFY120C6S  
1200V/200A 6 in one-package  
General Description  
STARPOWER IGBT Power Module provides  
ultrafast switching speed as well as short circuit  
ruggedness. It’s designed for the applications such  
as welding machine and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Uninterruptible power supply  
Inductive heating  
Welding machine  
Equivalent Circuit Schematic  
©2016 STARPOWER Semiconductor Ltd.  
1/19/2016  
1/9  
SN0A  

与GD200FFY120C6S相关器件

型号 品牌 获取价格 描述 数据表
GD200FFY120C6SF STARPOWER

获取价格

C6.8-3 Phase Bridge with NTC
GD200HFF120C2S STARPOWER

获取价格

C2.0-Half Bridge
GD200HFF120C8S STARPOWER

获取价格

C8.0-Half Bridge
GD200HFK120C2S STARPOWER

获取价格

C2.0.Half Bridge
GD200HFK120C8SN STARPOWER

获取价格

C8.1.Half Bridge
GD200HFK60C2S STARPOWER

获取价格

C2.0.Half Bridge
GD200HFK60C8S STARPOWER

获取价格

C8.0.Half Bridge
GD200HFK60C8SN STARPOWER

获取价格

C8.1.Half Bridge
GD200HFL120C2S STARPOWER

获取价格

C2.0.Half Bridge
GD200HFL120C2S_G4 STARPOWER

获取价格

C2.0.Half Bridge