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GD200FFY120C6S PDF预览

GD200FFY120C6S

更新时间: 2024-04-09 19:02:23
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 219K
描述
C6.2-3 Phase Bridge with NTC

GD200FFY120C6S 数据手册

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GD200FFY120C6S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD200FFY120C6S  
1200V/200A 6 in one-package  
General Description  
STARPOWER IGBT Power Module provides  
ultrafast switching speed as well as short circuit  
ruggedness. It’s designed for the applications such  
as welding machine and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Uninterruptible power supply  
Inductive heating  
Welding machine  
Equivalent Circuit Schematic  
©2016 STARPOWER Semiconductor Ltd.  
1/19/2016  
1/9  
SN0A  

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