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GS9012/E7 PDF预览

GS9012/E7

更新时间: 2024-02-23 08:13:27
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 21K
描述
BJT

GS9012/E7 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.57Is Samacsys:N
Base Number Matches:1

GS9012/E7 数据手册

 浏览型号GS9012/E7的Datasheet PDF文件第2页 
GS9012  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (PNP)  
TO-226AA (TO-92)  
0.142 (3.6)  
0.181 (4.6)  
Features  
PNP Silicon Epitaxial Planar Transistors for switching  
and amplifier applications. Especially suitable for AF-  
driver stages and low power output stages such as  
portable radios in class-B push-pull operation.  
• Complementary to GS9013  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
Packaging Codes/Options:  
E6/Bulk-5K per container, 20K per box  
E7/4K per Ammo mag., 20K per box  
max.  
0.022 (0.55)  
0.098 (2.5)  
Bottom  
View  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
20  
V
5  
V
Collector Current  
500  
mA  
mW  
°C/W  
°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
625(1)  
200(1)  
150  
RθJA  
Tj  
Storage Temperature Range  
TS  
55 to +150  
°C  
Notes:  
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case  
Document Number 88195  
10-May-02  
www.vishay.com  
1

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Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-226A
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92
GS9012E/E7 ETC

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92
GS9012F/E6 VISHAY

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Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-226A
GS9012F/E7 ETC

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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92
GS9012G VISHAY

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Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-226A