GS8322Z18B-250IV

更新时间： 2024-01-19 15:23:41

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
39页	2087K
描述
36Mb Pipelined and Flow Through Synchronous NBT SRAM

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技术参数
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GS8322Z18B-250IV 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	14 X 22 MM, 1.27 MM PITCH, FPBGA-119	针数：	119
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.11
最长访问时间：	6.5 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码：	R-PBGA-B119	JESD-609代码：	e0
长度：	22 mm	内存密度：	37748736 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	18
功能数量：	1	端子数量：	119
字数：	2097152 words	字数代码：	2000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.99 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

GS8322Z18B-250IV 数据手册

GS8322Z18/36/72(B/E/C)-xxxV

250 MHz–133 MHz

119, 165 & 209 BGA

Commercial Temp

Industrial Temp

36Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Features

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V or 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-, 165- or 209-Bump BGA package

• RoHS-compliant packages available

The GS8322Z18/36/72-xxxV may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

Functional Description

The GS8322Z18/36/72-xxxV is a 36Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8322Z18/36/72-xxxV is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 119-bump, 165-bump or 209-bump BGA package.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

3.0 3.0 3.0 3.5 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.7 7.5 ns

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

Curr (x72)

275 255 240 215 205 180 mA

330 300 280 245 230 205 mA

415 385 340 305 285 255 mA

6.5 7.0 7.5 8.0 8.5 8.5 ns

Flow

tCycle

Through

2-1-1-1

Curr (x18)

Curr (x36)

Curr (x72)

200 190 180 170 160 150 mA

225 215 205 195 185 170 mA

300 280 255 245 230 225 mA

Rev: 1.05 6/2006

1/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...39

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与GS8322Z18B-250IV相关器件

型号	品牌	获取价格	描述	数据表
GS8322Z18B-250IVT	GSI	获取价格	ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS8322Z18B-250T	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18B-250V	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18B-250VT	GSI	获取价格	ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS8322Z18B-V	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18C-150T	GSI	获取价格	ZBT SRAM, 2MX18, 10ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209
GS8322Z18C-200IT	GSI	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209
GS8322Z18E-133	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-133I	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-133IT	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAM

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