5秒后页面跳转
GS81280Z18GT-250IV PDF预览

GS81280Z18GT-250IV

更新时间: 2022-02-26 09:36:45
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
22页 367K
描述
144Mb Pipelined and Flow Through Synchronous NBT SRAM

GS81280Z18GT-250IV 数据手册

 浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第2页浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第3页浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第4页浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第5页浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第6页浏览型号GS81280Z18GT-250IV的Datasheet PDF文件第7页 
GS81280Z18/36GT-xxxV  
333 MHz200 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
144Mb Pipelined and Flow Through  
Synchronous NBT SRAM  
1.8 V or 2.5 V V  
DD  
1.8 V or 2.5 V I/O  
Because it is a synchronous device, address, data inputs, and  
read/ write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Sleep mode enable (ZZ) and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation required by asynchronous SRAMs  
and simplifies input signal timing.  
Features  
• NBT (No Bus Turn Around) functionality allows zero wait  
read-write-read bus utilization; Fully pin-compatible with  
both pipelined and flow through NtRAM™, NoBL™ and  
ZBT™ SRAMs  
• 1.8 V or 2.5 V +10%/10% core power supply  
• 1.8 V or 2.5 V I/O supply  
• User-configurable Pipeline and Flow Through mode  
• LBO pin for Linear or Interleave Burst mode  
• Pin compatible with 4Mb, 9Mb, 18Mb, 36Mb, and 72Mb  
devices  
• Byte write operation (9-bit Bytes)  
• 3 chip enable signals for easy depth expansion  
• ZZ Pin for automatic power-down  
The GS81280Z18/36GT-xxxV may be configured by the user  
to operate in Pipeline or Flow Through mode. Operating as a  
pipelined synchronous device, meaning that in addition to the  
rising edge triggered registers that capture input signals, the  
device incorporates a rising-edge-triggered output register. For  
read cycles, pipelined SRAM output data is temporarily stored  
by the edge triggered output register during the access cycle  
and then released to the output drivers at the next rising edge of  
clock.  
• RoHS-compliant 100-lead TQFP package available  
Functional Description  
The GS81280Z18/36GT-xxxV is a 144Mbit Synchronous  
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL  
or other pipelined read/double late write or flow through read/  
single late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
The GS81280Z18/36GT-xxxV is implemented with GSI's high  
performance CMOS technology and is available in a JEDEC-  
standard 100-pin TQFP package.  
Parameter Synopsis  
-333  
2.5  
3.0  
-250  
-200  
Unit  
tKQ  
tCycle  
2.5  
4.0  
3.0  
5.0  
ns  
ns  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x32/x36)  
530  
580  
430  
460  
360  
390  
mA  
mA  
tKQ  
4.5  
4.5  
5.5  
5.5  
6.5  
6.5  
ns  
ns  
tCycle  
Flow Through  
2-1-1-1  
Curr (x18)  
Curr (x32/x36)  
400  
420  
360  
380  
285  
320  
mA  
mA  
Rev: 1.01 5/2017  
1/21  
© 2015, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

与GS81280Z18GT-250IV相关器件

型号 品牌 描述 获取价格 数据表
GS81280Z18GT-250V GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格

GS81280Z18GT-333 GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格

GS81280Z18GT-333I GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格

GS81280Z18GT-333IV GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格

GS81280Z18GT-333V GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格

GS81280Z18GT-400 GSI 144Mb Pipelined and Flow Through Synchronous NBT SRAM

获取价格