GS81280Z18/36GT-400/333/250/200
400 MHz–200 MHz
100-Pin TQFP
Commercial Temp
Industrial Temp
144Mb Pipelined and Flow Through
Synchronous NBT SRAM
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 4Mb, 9Mb, 18Mb, 36Mb, and 72Mb
devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
The GS81280Z18/36GT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
• RoHS-compliant 100-lead TQFP package available
Functional Description
The GS81280Z18/36GT is a 144Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
The GS81280Z18/36GT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Parameter Synopsis
-400
-333
-250
-200
Unit
tKQ
tCycle
2.5
2.5
2.5
3.0
2.5
4.0
3.0
5.0
ns
ns
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
610
690
530
600
430
470
360
400
mA
mA
tKQ
4.0
4.0
4.5
4.5
5.5
5.5
6.5
6.5
ns
ns
tCycle
Flow Through
2-1-1-1
Curr (x18)
Curr (x32/x36)
430
470
400
435
360
355
294
330
mA
mA
Rev: 1.01 5/2017
1/22
© 2015, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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