5秒后页面跳转
GS1B PDF预览

GS1B

更新时间: 2024-02-06 16:19:57
品牌 Logo 应用领域
DCCOM 二极管
页数 文件大小 规格书
2页 419K
描述
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER

GS1B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED

GS1B 数据手册

 浏览型号GS1B的Datasheet PDF文件第2页 
GS1A M1  
THRU  
DC COMPONENTS CO., LTD.  
RECTIFIER SPECIALISTS  
R
GS1M M7  
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts  
CURRENT 1.0 Ampere  
FEATURES  
* ldeal for surface mounted applications  
* Low leakage current  
* Glass passivated junction  
SMA(DO-214AC)  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
*Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
* Polarity: As marked  
* Mounting position: Any  
* Weight: 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
GS1A  
M1  
GS1B GS1D  
GS1G GS1J  
GS1K GS1M  
SYMBOL  
UNITS  
Volts  
M2  
100  
M3  
200  
M4  
400  
M5  
600  
M6  
800  
M7  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
RRM  
50  
1000  
RMS  
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
Volts  
Maximum DC Blocking Voltage  
V
DC  
O
100  
1000  
Volts  
Maximum Average Forward Rectified Current at T  
A
= 75oC  
I
Amps  
Peak Forward Surge Current IFM(surge): 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
30  
Amps  
Maximum Forward Voltage at 1.0A DC  
V
F
1.1  
5.0  
50  
Volts  
uAmps  
uSec  
0C/W  
pF  
@T  
@T  
A
A
= 25oC  
= 125oC  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
I
R
Maximum Reverse Recovery Time (Note 3)  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance (Note 1)  
Operating and Storage Temperature Range  
2.5  
trr  
RθJL  
30  
CJ  
15  
-65 to + 175  
0 C  
TJ, TSTG  
NOTES : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
2. Thermal Resistance (Junction to Ambient), .24in2 (6.0mm2 ) copper pads to each terminal.  
3. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
340  
EXIT  
NEXT  

与GS1B相关器件

型号 品牌 获取价格 描述 数据表
GS1-B1-12-410-1A-MC Carling Technologies

获取价格

Magnetic Circuit Breaker,
GS1-B1-14-610-12-ME Carling Technologies

获取价格

Magnetic Circuit Breaker,
GS1B12MOHMK KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 12000000ohm, 3000V, 10% +/-Tol, 100ppm/Cel, Th
GS1B13MOHMD KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 13000000ohm, 3000V, 0.5% +/-Tol, 100ppm/Cel, T
GS1-B1-52-650-1C-ME Carling Technologies

获取价格

Magnetic Circuit Breaker,
GS1B2004F KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 2000000ohm, 3000V, 1% +/-Tol, 100ppm/Cel, Thro
GS1B2005D KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 20000000ohm, 3000V, 0.5% +/-Tol, 100ppm/Cel, T
GS1B2005F KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 20000000ohm, 3000V, 1% +/-Tol, 100ppm/Cel, Thr
GS1B200MOHMG KOA

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 1W, 2%, 100ppm, 200000000ohm, THROUGH HOLE MOUNT, AXIAL
GS1B200MOHMJ KOA

获取价格

Fixed Resistor, Metal Glaze/thick Film, 1W, 200000000ohm, 3000V, 5% +/-Tol, 100ppm/Cel, Th