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GP30B PDF预览

GP30B

更新时间: 2024-01-18 06:45:53
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
3页 82K
描述
3.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts

GP30B 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:1400 V
最大反向电流:5 µA最大反向恢复时间:3 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

GP30B 数据手册

 浏览型号GP30B的Datasheet PDF文件第2页浏览型号GP30B的Datasheet PDF文件第3页 
M C C  
GP30A  
THRU  
GP30M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
3.0 Amp Glass  
Passivated Junction  
Rectifiers  
Features  
·
·
·
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction, Plastic Case  
3.0 amperes operation at TA=55OC and with no  
thermal runaway.  
·
Typical I less than 0.1uA  
R
50 to 1000 Volts  
DO-201AD  
Maximum Ratings  
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 20OC/W Junction to Lead  
Maximum  
Recurrent  
Maximum DC  
Blocking  
D
MCC  
Maximum  
Part Number  
Peak Reverse  
Voltage  
RMS Voltage  
Voltage  
GP30A  
GP30B  
GP30D  
GP30G  
GP30J  
GP30K  
GP30M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Maximum Average  
Forward Current  
Peak Forward Surge  
Current  
IF(AV)  
3.0 A  
TA = 55OC  
IFSM  
125A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
Instantaneous  
Forward Voltage  
GP30A -30B  
INCHES  
MIN  
---  
MM  
MIN  
DIM  
A
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
1.20  
25.40  
VF  
IR  
1.2V  
1.1V  
IFM = 3.0A;  
TA=25OC  
B
C
---  
.048  
1.000  
GP30D -30M  
D
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
5.0uA  
100uA TA=150OC  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
www.mccsemi.com  

GP30B 替代型号

型号 品牌 替代类型 描述 数据表
1N5401 TAITRON

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