Datasheet > GP28S50GN247

GP28S50GN247

更新时间： 2024-10-02 00:55:35

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	501K
描述
POWER FIELD EFFECT TRANSISTOR

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数据手册

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GP28S50GN247 数据手册

GP28S50

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.



Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode



Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(on) Specified at Elevated Temperature

Isolated Mounting Hole Reduces Mounting Hardware

PIN CONFIGURATION

SYMBOL

TO-220/TO-220F

Top View

TO-3P/T-O247

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_{D (1)}

I_DM

Value

Unit

Gate-to-Source Voltage － Continue

Total Power Dissipation – TO220

– TO220FP

V_GS

±20

P_D

245

–TO3P

255

–TO247

227

W/℃

Derate above 25℃ – TO220

– TO220FP

1.96

0.33

2.04

1.82

-55 to 150

320

–TO3P

–TO247

Junction and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 8A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case -TO220

－ Junction to Case -TO220FP

－ Junction to Case -TO3P

－ Junction to Case -TO247

T_J, T_STG

E_AS

℃

θ_JC

0.51

℃/W

0.49

0.55

62.5

－ Junction to Ambient

-TO220, TO220FP

-TO3P ,TO247

θ_JA

T_L

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

(1) Drain current limited by maximum junction temperature

260

℃

2015/5/20

Rev1.2

Greatpower Microelectronic Corp.

Page 1

12 3 4 5 6 7 8

中文翻译

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