Datasheet > GNP1070TC-Z (新产品)

GNP1070TC-Z (新产品)

更新时间： 2024-10-01 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
12页	1860K
描述
GNP1070TC-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (RonCiss、RonCoss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.

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GNP1070TC-Z

GaN Enhancement Mode Power Transistor

Datasheet

lOutline

DFN8080K

(5), (6), (7), (8)

V_DSS

650V

70mΩ

5.2nC

20A

R_DS(on)(Typ.)

Q_G, _typ.

I_D(Tc=25℃)

(4), (3), (2), (1)

(Bottom view)

(Top view)

Q_oss@ 400V

Q_rr

44nC

0nC

lInner circuit

(5), (6), (7), (8)

(1) Source

(2) Source

(3) Kelvin Source

(4) Gate

(5) Drain

(6) Drain

(4)

(3)

lFeatures

・650V E-mode GaN FET

・70mΩ Resistance

(7) Drain

(8) Drain

(1), (2)

・5.2nC Gate Charge

lPackaging specifications

Embossed tape

Packing

lApplication

330

Reel size (mm)

・High switching frequency converter

・High density converter

Tape width (mm)

Type

3500

Basic ordering unit (pcs)

Taping code

Marking

GNP1070TC

lAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

Value

Unit

T_c= 25°C

7.3

Continuous Drain current

Pulse Drain current

I_D

T_c= 125°C

T_c= 25°C

T_c= 125°C

*1*2

I_D,pulse

V_DSS

Drain - Source Voltage

650

750

-10 to +6

8.5

Transient Drain - Source Voltage

Gate - Source voltage (DC)

Transient Gate - Source voltage

Power dissipation(Tc=25℃)

Junction temperature

V_{DSS(transient)}

V_GSS

V_{GSS(transient)}

P_tot

T_j

°C

150

www.rohm.com

TSZ22111・14・001

TSZ02201-03C3AL300030-1-2

2023.04.18 - Rev.005

1/9

12 3 4 5 6 7...12

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