Datasheet > GMPCR06

GMPCR06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		可控硅整流器
页数	文件大小	规格书
3页	217K
描述
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V

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GMPCR06 数据手册

ISSUED DATE :2005/12/21

REVISED DATE :2006/03/29B

GTM

CORPORATION

Thermal Characteristics

Characteristic

Thermal Resistance, Junction-to-Ambient

Lead Solder Temperature (< 1/16” from case, 10 secs max)

Symbol

Max

Unit

к/W

RꢁJA

260

Electrical Characteristics (T

= 25к unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

Off Characteristics

Peak Repetitive Forward or Reverse Blocking Current (Note2)

=25к

=110к

DRM,

RRM

100

ꢀA

(

DRM=400V and VRRM=400V; RGK=1kꢂ)

On Characteristics

Peak Forward On-State Voltage* (ITM=1A Peak @T

=25к)

1.7

Gate Trigger Current (Continuous dc) (Note3)

(VAK=7.0 Vdc, RL=100ꢂ)

=25к

100

ꢀA

Holding Current (Note2)

(VAK=7.0 Vdc, Initiating Current=20mA)

=25к

=-40к

0.5

5.0

Latch Current

=25к

0.6

0.62

0.8

1.2

(VAK=7.0 Vdc, I

Gate Trigger Voltage (Continuous dc) (Note3)

(VAK=7.0 Vdc, R =100ꢂ)

g=200ꢀA)

=-40к

=25к

C=-40к

VGT

Dynamic Characteristics

Critical Rate of Rise of Off-State Voltage

dV/dt

di/dt

V/ꢀs

A/ꢀs

Critical Rate of Rise of Off-State Current

(IPK=20AV, P =10ꢀsec; diG/dt=1A/ꢀsec, Igt=20mA)

D=400V, Exponential Waveform, RGK=1000ꢂ, TJ=110к)

*Indicates Pulse Test: Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%.

Note 2.RGK=1000ꢂ included in measurement.

Note 3.Dose not include RGK in measurement.

Voltage Current Characteristic of SCR

Symbol

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

DRM

RRM

Holding Current

GMPCR06

Page: 2/3

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