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GM71V17403CT-6 PDF预览

GM71V17403CT-6

更新时间: 2024-02-07 15:36:51
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
10页 101K
描述
x4 EDO Page Mode DRAM

GM71V17403CT-6 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP24/26,.36
针数:26Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.19Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G24JESD-609代码:e0
长度:17.14 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP24/26,.36封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:2048座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.09 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

GM71V17403CT-6 数据手册

 浏览型号GM71V17403CT-6的Datasheet PDF文件第1页浏览型号GM71V17403CT-6的Datasheet PDF文件第2页浏览型号GM71V17403CT-6的Datasheet PDF文件第4页浏览型号GM71V17403CT-6的Datasheet PDF文件第5页浏览型号GM71V17403CT-6的Datasheet PDF文件第6页浏览型号GM71V17403CT-6的Datasheet PDF文件第7页 
GM71V17403C  
GM71VS17403CL  
DC Electrical Characteristics (VCC = 3.3V+/-0.3V, VSS = 0V, TA = 0 ~ 70C)  
Symbol  
Parameter  
Min Max Unit Note  
Output Level  
Output "H" Level Voltage (IOUT = -2mA)  
V
OH  
2.4  
0
V
CC  
V
V
V
OL  
Output Level  
Output "L" Level Voltage (IOUT = 2mA)  
0.4  
50ns  
60ns  
70ns  
-
-
100  
90  
Operating Current  
Average Power Supply Operating Current  
(RAS, CAS Cycling : tRC = tRC min)  
I
CC1  
mA  
mA  
mA  
1, 2  
-
80  
Standby Current (TTL)  
Power Supply Standby Current  
(RAS, CAS = VIH, DOUT = High-Z)  
I
I
CC2  
CC3  
-
2
50ns  
60ns  
70ns  
50ns  
60ns  
-
-
-
-
-
100  
90  
RAS Only Refresh Current  
Average Power Supply Current  
RAS Only Refresh Mode  
(tRC = tRC min)  
2
80  
90  
EDO Page Mode Current  
Average Power Supply Current  
EDO Page Mode  
I
CC4  
mA  
1, 3  
80  
(tHPC = tHPC min)  
-
-
-
70ns  
75  
1
Standby Current (CMOS)  
Power Supply Standby Current  
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)  
I
I
CC5  
CC6  
mA  
uA  
100  
5
CAS-before-RAS Refresh Current  
(tRC = tRC min)  
50ns  
60ns  
70ns  
-
-
-
100  
90  
mA  
80  
I
I
I
CC7  
Battery Backup Operating Current(Standby with CBR Refresh)  
(CBR refresh, tRC = 31.3us, tRAS <= 0.3us,  
4,5  
-
-
300  
5
uA  
D
OUT = High-Z, CMOS interface)  
CC8  
CC9  
Standby Current RAS = VIH  
CAS = VIL  
mA  
1
5
D
OUT = Enable  
Self-Refresh Mode Current  
(RAS, CAS<=0.2V, DOUT=High-Z, CMOS interface)  
-
200  
10  
uA  
uA  
uA  
I
L(I)  
Input Leakage Current  
Any Input (0V<=VIN<= 4.6V)  
-10  
-10  
I
L(O)  
Output Leakage Current  
(DOUT is Disabled, 0V<=VOUT<= 4.6V)  
10  
Note: 1. ICC depends on output load condition when the device is selected.  
CC(max) is specified at the output open condition.  
2. Address can be changed once or less while RAS = VIL  
I
.
3. Address can be changed once or less while CAS = VIH  
4. CAS = L (<=0.2) while RAS = L (<=0.2).  
5. L - Version.  
.
Rev 0.1 / Apr’01  

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