Datasheet > GM71S4400CLR-70

GM71S4400CLR-70

更新时间： 2022-11-26 04:00:50

品牌	Logo	应用领域
乐金电子 - LG		/
页数	文件大小	规格书
9页	107K
描述
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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数据手册

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GM71S4400CLR-70 数据手册

GM71C(S)4400C/CL

LG Semicon

Read- Modify-Write Cycle

GM71C(S)4400 GM71C(S)4400 GM71C(S)4400

C/CL-60 C/CL-70 C/CL-80

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

RWC

RWD

CWD

AWD

OEH

Read-Modify-Write Cycle Time

RAS to WE Delay Time

150

180

200

105

CAS to WE Delay Time

Column Address to WE Delay Time

OE Hold Time from WE

Refresh Cycle

GM71C(S)4400 GM71C(S)4400 GM71C(S)4400

C/CL-60 C/CL-70 C/CL-80

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

CSR

CAS Set-up Time

(CAS-before-RAS Refresh Cycle)

CHR

CAS Hold Time

(CAS-before-RAS Refresh Cycle)

RPC

CPN

RAS Precharge to CAS Hold Time

CAS Precharge Time in Normal Mode

Fast Page Mode Cycle

GM71C(S)4400 GM71C(S)4400 GM71C(S)4400

C/CL-60 C/CL-70 C/CL-80

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

Fast Page Mode Cycle Time

Fast Page Mode CAS Precharge Time

Fast Page Mode RAS Pulse Width

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

100,000

RASP

ACP

RHCP

CPW

3,13,17

Fast Page Mode Read-Modify-Write Cycle 55

CAS Precharge to WE Delay Time

PRWC

Fast Page Mode Read-Modify-Write Cycle

Time

100

1...3 4 567 8 9

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