Datasheet > GM71S4400CLJ-70

GM71S4400CLJ-70

更新时间： 2022-11-26 04:00:50

品牌	Logo	应用领域
乐金电子 - LG		/
页数	文件大小	规格书
9页	107K
描述
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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GM71S4400CLJ-70 数据手册

GM71C(S)4400C/CL

LG Semicon

DC Electrical Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C)

Symbol

Parameter

Min Max Unit Note

VOH

Output Level

“H”

2.4

VCC

Output

Output Level

“L”

Level Voltage (IOUT = -5mA)

VOL

ICC1

0.4

Output

Level Voltage (IOUT = 4.2mA)

OperatingCurrent

Average Power Supply Operating Current

(RAS, CAS, Address Cycling: tRC = tRC min)

60ns

70ns

80ns

110

100

mA 1, 2

ICC2

ICC3

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS= VIH, DOUT = High-Z)

RAS-Only Refresh Current

Average Power Supply Current

RAS-Only Refresh Mode

60ns

70ns

80ns

60ns

70ns

110

100

(RAS Cycling, CAS = VIH, tRC = tRC min)

Fast Page Mode Current

Average Power Supply Current

Fast Page Mode

ICC4

110

100

mA 1, 3

(RAS = VIL, CAS, Address Cycling: tPC = tPC min)

80ns

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >= VCC - 0.2V , DOUT=High-Z)

ICC5

ICC6

200 uA

110

4, 5

CAS-before-RAS Refresh Current

(tRC = tRC min)

60ns

70ns

80ns

100

ICC7

ICC8

Battery Back Up Current (Standby with CBR Refresh)

(tRC=125us, tRAS<=1us, WE=VIH, CAS=VIL,

OE, Address and DIN=VIH or VIL, DOUT=High-Z)

300 uA

4, 5

Standby Current RAS = VIH

CAS = VIL

DOUT = Enable

II(L)

Input Leakage Current

Any Input (0V<=VIN<=7V)

-10

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<=7V)

IO(L)

Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output

open condition.

2. Address can be changed once or less while RAS = VIL

3. Address can be changed once or less while CAS = VIH

4. L-version.

5. VCC-0.2V<=VIH<=6.5V, 0V<=VIL<=0.2V.

1 234 5 6 7...9

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