Datasheet > GM71S4400CLJ-70

GM71S4400CLJ-70

更新时间： 2022-11-26 04:00:50

品牌	Logo	应用领域
乐金电子 - LG		/
页数	文件大小	规格书
9页	107K
描述
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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GM71S4400CLJ-70 数据手册

GM71C(S)4400C/CL

1,048,576 WORDS x 4BIT

LG Semicon Co.,Ltd.

CMOS DYNAMIC RAM

Description

Features

The GM71C(S)4400C/CL is the new generation

dynamic RAM organized 1,048,576 words x 4 bit.

GM71C(S)4400C/CL has realized higher density,

higher performance and various functions by

utilizing advanced CMOS process technology. The

GM71C(S)4400C/CL offers Fast Page Mode as a

high speed access Mode. Multiplexed address

inputs permit the GM71C(S)4400C/CL to be

packaged in a standard 300mil 20(26) pin plastic

SOJ and standard 300mil 20(26) pin plastic

TSOP II. The package size provides high system

bit densities and is compatible with widely

available automated testing and insertion

equipment. System oriented features include single

power supply of 5V+/-10% tolerance, direct

interfacing capability with high performance logic

families such as Schottky TTL.

* 1,048,576 Words x 4 Bit Organization

* Fast Page Mode Capability

* Single Power Supply (5V+/-10%)

* Fast Access Time & Cycle Time

(Unit: ns)

RAC

CAC

110

130

150

GM71C(S)4400C/CL-60

GM71C(S)4400C/CL-70

GM71C(S)4400C/CL-80

* Low Power

Active : 605/550/495mW (MAX)

Standby : 5.5mW (CMOS level : MAX)

1.1mW (L-version)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 1024 Refresh Cycles/16ms

* 1024 Refresh Cycles/128ms (L-version)

* Battery Back Up Operation (L-version)

Pin Configuration

20 (26) SOJ

20 (26) TSOP II

I/O1

VSS

I/O1

20 VSS

VSS 20

I/O1

I/O2

RAS

I/O4

I/O3

CAS

I/O2

RAS

I/O4

I/O2

RAS

18 I/O3

I/O3 18

CAS

16 OE

OE 16

15 A8

A8 15

12 A5

A5 12

VCC

NORMAL TYPE

REVERSE TYPE

(Top View)

12 3 4 5 6 7...9

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