Datasheet > GM71CS17400CJ-7

GM71CS17400CJ-7

更新时间： 2024-02-13 09:00:48

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
10页	97K
描述
DRAM

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技术参数
数据手册

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GM71CS17400CJ-7 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

GM71CS17400CJ-7 数据手册

GM71C(S)17400C/CL

DC Electrical Characteristics (VCC = 5.0V+/-10%, Vss = 0V, TA = 0 ~ 70C)

Symbol

Parameter

Min Max Unit Note

Output Level

Output "H" Level Voltage (IOUT = -5mA)

2.4

Output Level

Output "L" Level Voltage (IOUT = 4.2mA)

0.4

Operating Current

Average Power Supply Operating Current

(RAS, CAS Cycling : tRC = tRC min)

50ns

60ns

100

CC1

1, 2

70ns

CC2

CC3

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS = VIH, DOUT = High-Z)

50ns

60ns

100

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

70ns

50ns

60ns

CC4

Fast Page Mode Current

Average Power Supply Current

Fast Page Mode

1, 3

(tPC = tPC min)

70ns

CC5

CC6

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)

150

CAS-before-RAS Refresh Current

(tRC = tRC min)

50ns

60ns

70ns

100

Battery Backup Operating Current(Standby with CBR Refresh)

(CBR refresh, tRC=62.5us, tRAS<=0.3us,

CC7

CC8

350

OUT=High-Z, CMOS interface)

Standby Current RAS = VIH

CAS = VIL

OUT = Enable

L(I)

Input Leakage Current

Any Input (0V<=VIN<= 6V)

-10

IL(O)

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

Note: 1. ICC depends on output load condition when the device is selected.

CC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL

3. Address can be changed once or less while CAS = VIH

4. L-version.

Rev 0.1 / Apr’01

1 234 5 6 7...10

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