是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
Is Samacsys: | N | 访问模式: | FAST PAGE WITH EDO |
最长访问时间: | 70 ns | 其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G20 |
JESD-609代码: | e0 | 内存密度: | 4194304 bit |
内存集成电路类型: | EDO DRAM | 内存宽度: | 4 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 20 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX4 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP20/26,.36 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 1024 | 反向引出线: | YES |
自我刷新: | NO | 最大待机电流: | 0.0002 A |
子类别: | DRAMs | 最大压摆率: | 0.07 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.635 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GM71C4403ELR-80 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ELT | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ELT-60 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ELT-70 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ELT-80 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ER | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ER-60 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ER-70 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ER-80 | LG |
获取价格 |
1,048,576 Words x Bit Organization | |
GM71C4403ET | LG |
获取价格 |
1,048,576 Words x Bit Organization |