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GI250-2/64 PDF预览

GI250-2/64

更新时间: 2022-12-01 22:24:38
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 290K
描述
Rectifier Diode, 1 Element, 0.25A, 2000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

GI250-2/64 数据手册

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GI250-1 thru GI250-4  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Symbol  
Test condition  
Symbol GI250-1 GI250-2 GI250-3 GI250-4  
Unit  
V
Maximum instantaneous  
forward voltage  
at 0.25 A  
VF  
3.5  
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25 °C  
TA = 100 °C  
IR  
5.0  
50  
µA  
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Typical junction capacitance at 4.0 V, 1 MHz  
trr  
2.0  
3.0  
µs  
pF  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GI250-1 GI250-2 GI250-3 GI250-4  
Unit  
Typical thermal resistance (1)  
Notes:  
RθJA  
130  
°C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
0.25  
0.2  
15  
10  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
0.15  
0.1  
5.0  
0.05  
0
60 Hz Resistive  
or Inductive Load  
0.375" (9.5mm) Lead Length  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88625  
13-Sep-05  
2

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