Datasheet > GE40N03

GE40N03

更新时间： 2024-09-30 03:39:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	251K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GE40N03 数据手册

Pb Free Plating Product

ISSUED DATE :2005/01/25

REVISED DATE :2005/12/12B

GTM

CORPORATION

BVDSS

DS(ON)

30V

17mꢀ

40A

GE40N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE40N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications and suited for low

voltage application such as DC/DC converters and high efficiency switching circuit.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

169

Total Power Dissipation

W/к

Linear Derating Factor

0.4

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE40N03

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